? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 1.0 a i dm t c = 25 c, pulse width limited by t jm 1.8 a i a t c = 25 c 1.0 a e as t c = 25 c 100 mj dv/dt i s i dm , v dd v dss , t j 150c 10 v/ns p d t c = 25 c63 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-252 0.35 g to-263 2.50 g to-220 3.00 g polar tm power mosfets n-channel enhancement mode avalanche rated fast intrinsic rectifier IXTY1N120P ixta1n120p ixtp1n120p v dss = 1200v i d25 = 1a r ds(on) 20 ds99870b(06/12) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d = 50 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v 5 a t j = 125 c 200 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 15.5 20 features international standard packages low q g avalanche rated low package inductance fast intrinsic rectifier advantages high power density easy to mount space savings applications dc-dc converters switch-mode and resonant-mode power supplies ac and dc motor drives discharge circiuts in lasers, spark igniters, rf generators high voltage pulse power applications to-263 aa (ixta) g s d (tab) to-252 (ixty) g s d (tab) g = gate d = drain s = source tab = drain g d s to-220ab (ixtp) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTY1N120P ixta1n120p ixtp1n120p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 0.5 ? i d25 , note 1 0.55 0.92 s c iss 445 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 25 pf c rss 5.4 pf t d(on) 20 ns t r 28 ns t d(off) 54 ns t f 27 ns q g(on) 17.6 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 3.5 nc q gd 10.6 nc r thjc 2.00 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 1.0 a i sm repetitive, pulse width limited by t jm 3.0 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 900 ns notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-hole package, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 30 (external) i f = 1.0a, v gs = 0v,-di/dt = 100a/ s v r = 100v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source to-220 outline to-252 aa outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1. gate 2. drain 3. source 4. drain bottom side to-263 outline 1. gate 2. drain 3. source 4. drain bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005
? 2012 ixys corporation, all rights reserved IXTY1N120P ixta1n120p ixtp1n120p fig. 1. output characteristics @ t j = 25oc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. output characteristics @ t j = 125oc 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 3. r ds(on) normalized to i d = 0.5a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 1.0a i d = 0.5a fig. 4. r ds(on) normalized to i d = 0.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTY1N120P ixta1n120p ixtp1n120p ixys ref: ixt_1n120p (2a) 4-01-08-a fig. 7. transconductance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 0.5 1 1.5 2 2.5 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 q g - nanocoulombs v gs - volts v ds = 600v i d = 0.5a i g = 10ma fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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